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Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor
(Springer Netherlands, 2008)
The melt-quenched Sn10Sb20Se70 sample in the
bulk form was used to prepare films on well-cleaned glass
substrates by thermal evaporation method. The activation
energy for glass transition (apparent) and crystallization
has ...
Phase segregation in Pb:GeSbTe chalcogenide system
(EDP Sciences. http://www.epjap.org/, 2008)
Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band
gap and crystalline structure of Ge2Sb2Te5 has been studied. In Pb:GeSbTe chalcogenide films prepared by
thermal evaporation, ...
Phase segregation in Pb:GeSbTe chalcogenide system
(EDP Sciences, 2008)
Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band
gap and crystalline structure of Ge2Sb2Te5 has been studied. In Pb:GeSbTe chalcogenide films prepared by
thermal evaporation, ...
Effect of composition on optical constants of Pb: GeSbTechalcogenide thin films
(2008)
Optical properties of Pb doped ternary Ge-Sb-Te chalcognide films prepared by thermal evaporation have been studied in
the visible and near-infrared spectral regions. The straightforward analysis proposed by Swanepoel has ...