DSpace JSPUI
DSpace preserves and enables easy and open access to all types of digital content including text, images, moving images, mpegs and data sets
Learn More
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10311/531| Title: | Phase segregation in Pb:GeSbTe chalcogenide system |
| Authors: | Kumar, J. Ahmad, M. Chander, R. Thangaraj, R. Sathiaraj, T.S. |
| Keywords: | Amorphous semiconductors Phase segregation |
| Issue Date: | 2008 |
| Publisher: | EDP Sciences |
| Citation: | Kumar, J. et al (2008) Phase segregation in Pb:GeSbTe chalcogenide system, The European Physical Journal Applied Physics, Vol. 41, pp. 13-18 |
| Abstract: | Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band gap and crystalline structure of Ge2Sb2Te5 has been studied. In Pb:GeSbTe chalcogenide films prepared by thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 ◦C in Pb0Ge20Sb24Te56, Pb1.6Ge19Sb26Te54, Pb3Ge17Sb28Te53 and Pb5Ge12Sb28Te55 respectively. XRD investigations of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation temperature is followed with the increase in phase segregation. The optical gap shows marginal variations with composition. |
| URI: | http://hdl.handle.net/10311/531 |
| Appears in Collections: | Research articles (Dept of Physics) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Phase segregation.pdf | 560.07 kB | Adobe PDF |  View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.