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Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level
(Elsevier Ltd, 2008)
Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon
atmosphere at a high base pressure of 3 10 4mbar without substrate heating and oxygen admittance.
The use of pure argon ...
Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level
(Elsevier Science Ltd. http://www.elsevier.com/locate/mejo, 2008)
Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon atmosphere at a high base pressure of 3×10−4 mbar without substrate heating and oxygen admittance. The use of pure argon ...