| dc.contributor.author | Kumar, J. | |
| dc.contributor.author | Ahmad, M. | |
| dc.contributor.author | Chander, R. | |
| dc.contributor.author | Thangaraj, R. | |
| dc.contributor.author | Sathiaraj, T.S. | |
| dc.date.accessioned | 2010-07-08T08:24:08Z | |
| dc.date.available | 2010-07-08T08:24:08Z | |
| dc.date.issued | 2008 | |
| dc.identifier.citation | Kumar, J. et al (2008) Phase segregation in Pb:GeSbTe chalcogenide system, The European Physical Journal Applied Physics, Vol. 41, pp. 13-18 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10311/531 | |
| dc.description.abstract | Effect of Pb substitution on the amorphous-crystalline transformation temperature, optical band
gap and crystalline structure of Ge2Sb2Te5 has been studied. In Pb:GeSbTe chalcogenide films prepared by
thermal evaporation, an amorphous to crystallization transition is observed at 124, 129, 136 and 138 ◦C in
Pb0Ge20Sb24Te56, Pb1.6Ge19Sb26Te54, Pb3Ge17Sb28Te53 and Pb5Ge12Sb28Te55 respectively. XRD investigations
of annealed samples reveal that Pb substitution retains NaCl type crystalline structure of GST
but expands the lattice due to large atomic radii. The increase in amorphous-crystalline transformation
temperature is followed with the increase in phase segregation. The optical gap shows marginal variations
with composition. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | EDP Sciences | en_US |
| dc.subject | Amorphous semiconductors | en_US |
| dc.subject | Phase segregation | en_US |
| dc.title | Phase segregation in Pb:GeSbTe chalcogenide system | en_US |
| dc.type | Published Article | en_US |
| dc.link | http//www.edpscience.org | en_US |
